Surface barriers on ZnSe and ZnO

Optoelectronic Properties of ZnSe, ITO, TiO2 and ZnO Thin Films

Zinc selenide (ZnSe) a II-VI compound semiconductor with cubic zinc blende structure and a direct bandgap of 2.7 eV is found to be a very promising material for optoelectronic devices (Venkatachalam et al., 2007a). Semiconductor heterostructures employing zinc selenide and related alloys are an option for the production of optoelectronic devices emitting in the blue – green spectral range (Haas...

All-wurtzite ZnO/ZnSe hetero-nanohelix: formation, mechanics and luminescence.

A unique all-wurtzite ZnO/ZnSe hetero-nanohelix is formed via growing wurtzite ZnSe nanoteeth on ZnO nanobelts through a one step thermal evaporation method. The microstructure and growth mechanism of the hetero-nanohelix are investigated in detail. The formation of metastable wurtzite ZnSe is attributed to the wurtzite ZnO template. Mechanical forces, thermal expansion and polar plane in hexag...

ZnO/ZnSe type II core–shell nanowire array solar cell

We report the realization of a prototype solar cell based on a ZnO/ZnSe core/shell nanowire array. The ZnO/ZnSe core/shell nanowire forms a type II heterojunction that can have an effective bandgap much below that of either component. The nanowire array architecture offers strong enhancement in light absorption through increasing the junction area and light trapping. The device shows a photo-re...

Surface Barriers on Zinc Oxide

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires W.A. Bhutto, Z.M. Wu∗, Y.Y. Cao, W.P. Wang and J.Y. Kang∗ Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Xiamen 361005, P.R. China ZnO/ZnSe coaxial nanowires with di erent ZnO core diameters were synthesized by using a two-step chemical vapor deposition. The ...